SI7464DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.24Ohm

Series :

TrenchFET®

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

200V

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Turn On Time-Max (ton) :

35ns

Package / Case :

PowerPAK® SO-8

Power Dissipation-Max :

1.8W Ta

JESD-30 Code :

R-PDSO-F5

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

5

Terminal Form :

Flat

Transistor Application :

SWITCHING

Turn-Off Delay Time :

15 ns

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Pin Count :

8

Case Connection :

DRAIN

Continuous Drain Current (ID) :

1.8A

Avalanche Energy Rating (Eas) :

0.45 mJ

Pulsed Drain Current-Max (IDM) :

8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

10 ns

Fall Time (Typ) :

15 ns

Power Dissipation :

1.8W

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

Turn Off Time-Max (toff) :

50ns

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Terminal Finish :

Pure Matte Tin (Sn)

Weight :

506.605978mg

Rds On (Max) @ Id, Vgs :

240m Ω @ 2.8A, 10V

Rise Time :

12ns

Pbfree Code :

yes

ECCN Code :

EAR99

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Number of Channels :

1

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

1.8A Ta

Number of Pins :

8

Number of Elements :

1

Published :

2013

Vgs(th) (Max) @ Id :

4V @ 250µA