SI7464DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Continuous Drain Current (ID) :

2.8A

Number of Channels :

1

Power Dissipation-Max :

1.8W Ta

Case Connection :

DRAIN

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.24Ohm

Terminal Form :

Flat

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain to Source Breakdown Voltage :

200V

Weight :

506.605978mg

Published :

2009

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Package / Case :

PowerPAK® SO-8

Length :

4.9mm

Number of Pins :

8

Radiation Hardening :

No

Number of Terminations :

5

Height :

1.04mm

Fall Time (Typ) :

12 ns

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

8A

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn Off Time-Max (toff) :

50ns

REACH SVHC :

Unknown

Avalanche Energy Rating (Eas) :

0.45 mJ

ECCN Code :

EAR99

Pin Count :

8

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Pbfree Code :

yes

Mounting Type :

Surface Mount

Nominal Vgs :

4 V

Transistor Application :

SWITCHING

Width :

5.89mm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.8W

Turn On Time-Max (ton) :

35ns

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

240m Ω @ 2.8A, 10V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

1.8A Ta

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Turn-Off Delay Time :

15 ns

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-F5

Rise Time :

12ns

Turn On Delay Time :

10 ns

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Gate to Source Voltage (Vgs) :

20V