SI7463DP-T1-E3
- Mfr.Part #
- SI7463DP-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 11A PPAK SO-8
- Stock
- 3,525
- In Stock :
- 3,525
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 5.89mm
- Length :
- 4.9mm
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 9.2m Ω @ 18.6A, 10V
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Manufacturer Package Identifier :
- S17-0173-Single
- Published :
- 2011
- ECCN Code :
- EAR99
- FET Type :
- P-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- PowerPAK® SO-8
- Dual Supply Voltage :
- 40V
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Number of Pins :
- 8
- Height :
- 1.17mm
- Pin Count :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Weight :
- 506.605978mg
- Termination :
- SMD/SMT
- Drain to Source Breakdown Voltage :
- -40V
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 1.9W Ta
- Fall Time (Typ) :
- 25 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Turn-Off Delay Time :
- 200 ns
- Nominal Vgs :
- -3 V
- Factory Lead Time :
- 14 Weeks
- JESD-30 Code :
- R-XDSO-C5
- Turn On Delay Time :
- 20 ns
- Pulsed Drain Current-Max (IDM) :
- 60A
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta
- Number of Elements :
- 1
- Terminal Form :
- C BEND
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- -18.6A
- Threshold Voltage :
- -3V
- Resistance :
- 9.2mOhm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Junction Temperature (Tj) :
- 150°C
- Peak Reflow Temperature (Cel) :
- 260
- Rise Time :
- 25ns
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 5
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Power Dissipation :
- 1.9W
- Pbfree Code :
- yes
- Series :
- TrenchFET®
- Mounting Type :
- Surface Mount
- Datasheets
- SI7463DP-T1-E3
P-Channel Tape & Reel (TR) 9.2m Ω @ 18.6A, 10V ±20V 140nC @ 10V PowerPAK® SO-8
SI7463DP-T1-E3 Overview
This device's continuous drain current (ID) is -18.6A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 200 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 60A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -3V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
SI7463DP-T1-E3 Features
a continuous drain current (ID) of -18.6A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 200 ns
based on its rated peak drain current 60A.
a threshold voltage of -3V
SI7463DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7463DP-T1-E3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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