SI7462DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Turn On Delay Time :

15 ns

Pulsed Drain Current-Max (IDM) :

12A

FET Type :

N-Channel

Package / Case :

PowerPAK® SO-8

Max Operating Temperature :

150°C

Mount :

Surface Mount

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Turn-Off Delay Time :

40 ns

ECCN Code :

EAR99

JESD-30 Code :

R-XDSO-C5

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2012

Terminal Form :

C BEND

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

2.6A

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Pin Count :

8

Max Power Dissipation :

1.9W

Number of Terminations :

5

Rds On (Max) @ Id, Vgs :

130m Ω @ 4.1A, 10V

Packaging :

Cut Tape (CT)

Drain to Source Breakdown Voltage :

200V

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

Avalanche Energy Rating (Eas) :

1.8 mJ

Resistance :

130mOhm

Lead Free :

Lead Free

Fall Time (Typ) :

20 ns

Min Operating Temperature :

-55°C

Series :

TrenchFET®

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

PURE MATTE TIN

Element Configuration :

Single

Rise Time :

15ns

Number of Elements :

1