SI7462DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

200V

Rise Time :

15ns

Max Power Dissipation :

1.9W

Radiation Hardening :

No

Resistance :

130mOhm

Turn On Delay Time :

15 ns

Turn-Off Delay Time :

40 ns

Width :

5.0038mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

JESD-30 Code :

R-XDSO-C5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Number of Pins :

8

Length :

5.969mm

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

1.9W

Min Operating Temperature :

-55°C

Pbfree Code :

yes

Terminal Form :

C BEND

Drain Current-Max (Abs) (ID) :

2.6A

Terminal Position :

Dual

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

130m Ω @ 4.1A, 10V

Element Configuration :

Single

Package / Case :

PowerPAK® SO-8

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

Number of Terminations :

5

Transistor Application :

SWITCHING

Height :

1.0668mm

Packaging :

Cut Tape (CT)

Mount :

Surface Mount

Number of Elements :

1

Pin Count :

8

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

15 ns

JESD-609 Code :

e3

Continuous Drain Current (ID) :

4.1A

Max Operating Temperature :

150°C