SI7461DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.9W Ta

Factory Lead Time :

14 Weeks

Vgs (Max) :

±20V

Weight :

506.605978mg

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

14.5m Ω @ 14.4A, 10V

Mount :

Surface Mount

Package / Case :

PowerPAK® SO-8

Contact Plating :

Tin

Rise Time :

20ns

Mounting Type :

Surface Mount

Number of Channels :

1

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

3V @ 250µA

REACH SVHC :

Unknown

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

8.6A Ta

Resistance :

6.25MOhm

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

205 ns

JESD-30 Code :

R-XDSO-C5

Terminal Form :

C BEND

Turn On Delay Time :

20 ns

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

60A

Number of Elements :

1

Transistor Element Material :

SILICON

Pin Count :

8

Power Dissipation :

1.9W

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

60V

Length :

4.9mm

Height :

1.17mm

Fall Time (Typ) :

20 ns

Continuous Drain Current (ID) :

-14.4A

FET Type :

P-Channel

Threshold Voltage :

-3V

Width :

5.89mm

Number of Terminations :

5

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

150°C

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Manufacturer Package Identifier :

S17-0173-Single

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

60V

Case Connection :

DRAIN