SI7460DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Number of Pins :

8

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Package / Case :

PowerPAK® SO-8

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

11A

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Pin Count :

8

Terminal Form :

C BEND

Vgs(th) (Max) @ Id :

3V @ 250µA

Factory Lead Time :

14 Weeks

Power Dissipation-Max :

1.9W Ta

Drain to Source Breakdown Voltage :

60V

Dual Supply Voltage :

60V

Power Dissipation :

1.9W

Transistor Application :

SWITCHING

Series :

TrenchFET®

Pulsed Drain Current-Max (IDM) :

40A

Nominal Vgs :

1 V

Resistance :

9.6mOhm

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Width :

5.89mm

Number of Channels :

1

Weight :

506.605978mg

Mount :

Surface Mount

Turn-Off Delay Time :

75 ns

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

9.6m Ω @ 18A, 10V

Terminal Position :

Dual

REACH SVHC :

Unknown

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Elements :

1

Threshold Voltage :

1V

Pbfree Code :

yes

Height :

1.04mm

Rise Time :

16ns

JESD-30 Code :

R-XDSO-C5

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

4.9mm

Mounting Type :

Surface Mount

Fall Time (Typ) :

16 ns

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Published :

2015

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Number of Terminations :

5

Termination :

SMD/SMT

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

20 ns