SI7459DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Number of Elements :

1

Package / Case :

PowerPAK® SO-8

Case Connection :

DRAIN

Element Configuration :

Single

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

13A

Pulsed Drain Current-Max (IDM) :

60A

Transistor Element Material :

SILICON

Rise Time :

20ns

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±25V

Pin Count :

8

Terminal Finish :

PURE MATTE TIN

Transistor Application :

SWITCHING

Published :

2016

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

1.9W

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

25V

Series :

TrenchFET®

Number of Pins :

8

Turn-Off Delay Time :

180 ns

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

C BEND

Number of Terminations :

5

Power Dissipation-Max :

1.9W Ta

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

20 ns

Radiation Hardening :

No

Turn On Delay Time :

25 ns

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 22A, 10V

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-XDSO-C5

Pbfree Code :

yes