SI7459DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Continuous Drain Current (ID) :

-22A

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

5

Series :

TrenchFET®

Number of Elements :

1

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

180 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

C BEND

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.9W Ta

Mounting Type :

Surface Mount

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±25V

Lead Free :

Lead Free

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.9W

Fall Time (Typ) :

20 ns

Turn On Delay Time :

25 ns

Package / Case :

PowerPAK® SO-8

JESD-30 Code :

R-XDSO-C5

Case Connection :

DRAIN

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-30V

Pin Count :

8

Pulsed Drain Current-Max (IDM) :

60A

Published :

2011

Threshold Voltage :

-3V

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 22A, 10V

Transistor Application :

SWITCHING

Pbfree Code :

yes

Resistance :

6.8mOhm

Mount :

Surface Mount

Rise Time :

20ns