SI7457DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Drain to Source Voltage (Vdss) :

100V

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PDSO-C5

Number of Elements :

1

Mounting Type :

Surface Mount

Number of Channels :

1

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.042Ohm

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Fall Time (Typ) :

60 ns

Avalanche Energy Rating (Eas) :

80 mJ

Input Capacitance (Ciss) (Max) @ Vds :

5230pF @ 50V

Continuous Drain Current (ID) :

7.9A

Radiation Hardening :

No

ECCN Code :

EAR99

FET Type :

P-Channel

Case Connection :

DRAIN

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

28A

Rds On (Max) @ Id, Vgs :

42m Ω @ 7.9A, 10V

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Pulsed Drain Current-Max (IDM) :

35A

Weight :

506.605978mg

Terminal Form :

C BEND

Package / Case :

PowerPAK® SO-8

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Published :

2016

Drain to Source Breakdown Voltage :

-100V

Power Dissipation-Max :

5.2W Ta 83.3W Tc

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON