SI7457DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

30ns

Weight :

506.605978mg

Pbfree Code :

yes

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-100V

Package / Case :

PowerPAK® SO-8

FET Type :

P-Channel

Number of Channels :

1

Series :

TrenchFET®

Number of Terminations :

5

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

5.89mm

Height :

1.04mm

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

42m Ω @ 7.9A, 10V

Terminal Position :

Dual

Case Connection :

DRAIN

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Turn On Delay Time :

20 ns

RoHS Status :

ROHS3 Compliant

Terminal Form :

C BEND

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Published :

2013

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

5.2W Ta 83.3W Tc

Radiation Hardening :

No

Continuous Drain Current (ID) :

7.9A

Drain-source On Resistance-Max :

0.042Ohm

Length :

4.9mm

JESD-30 Code :

R-XDSO-C5

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn-Off Delay Time :

105 ns

Drain to Source Voltage (Vdss) :

100V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Pin Count :

8

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

35A

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

5230pF @ 50V

Power Dissipation :

5.2W

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Number of Pins :

8

Fall Time (Typ) :

60 ns