SI7456DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Factory Lead Time :

14 Weeks

Drain to Source Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Weight :

506.605978mg

Number of Pins :

8

Case Connection :

DRAIN

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

25m Ω @ 9.3A, 10V

Mount :

Surface Mount

Fall Time (Typ) :

10 ns

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

5.7A Ta

Turn On Time-Max (ton) :

60ns

Gate to Source Voltage (Vgs) :

20V

Height :

1.04mm

Package / Case :

PowerPAK® SO-8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PDSO-F5

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Number of Terminations :

5

JESD-609 Code :

e3

Number of Channels :

1

Pbfree Code :

yes

Power Dissipation :

1.9W

Pin Count :

8

Continuous Drain Current (ID) :

5.7A

Turn On Delay Time :

14 ns

Turn-Off Delay Time :

46 ns

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Published :

2013

Pulsed Drain Current-Max (IDM) :

40A

Terminal Position :

Dual

Power Dissipation-Max :

1.9W Ta

Resistance :

25mOhm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

45 mJ

Transistor Application :

SWITCHING

REACH SVHC :

Unknown

ECCN Code :

EAR99

Width :

5.89mm

Lead Free :

Lead Free

Length :

4.9mm

Threshold Voltage :

2V

Additional Feature :

AVALANCHE RATED

Nominal Vgs :

4 V

Rise Time :

10ns