SI7456DDP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

ECCN Code :

EAR99

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

27.8A Tc

Factory Lead Time :

14 Weeks

Gate to Source Voltage (Vgs) :

20V

Height :

1.12mm

FET Type :

N-Channel

Terminal Form :

C BEND

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Vgs (Max) :

±20V

Threshold Voltage :

1.5V

Power Dissipation-Max :

5W Ta 35.7W Tc

Mounting Type :

Surface Mount

Package / Case :

PowerPAK® SO-8

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Published :

2014

Transistor Application :

SWITCHING

Turn-Off Delay Time :

19 ns

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Rise Time :

14ns

Radiation Hardening :

No

REACH SVHC :

Unknown

Number of Pins :

8

JESD-30 Code :

R-PDSO-C5

Power Dissipation :

5W

Pulsed Drain Current-Max (IDM) :

70A

Turn On Delay Time :

13 ns

Gate Charge (Qg) (Max) @ Vgs :

29.5nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

5

Fall Time (Typ) :

10 ns

Rds On (Max) @ Id, Vgs :

23m Ω @ 10A, 10V

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 50V

Resistance :

42mOhm

Length :

6.25mm

Series :

TrenchFET®

Width :

5.26mm

Continuous Drain Current (ID) :

27.8A