SI7456CDP-T1-GE3
- Mfr.Part #
- SI7456CDP-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 27.5A PPAK SO-8
- Stock
- 13,800
- In Stock :
- 13,800
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 506.605978mg
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2.8V @ 250μA
- Terminal Position :
- Dual
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Pure Matte Tin (Sn)
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 730pF @ 50V
- Terminal Form :
- C BEND
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 27.5A Tc
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 1.2V
- JESD-30 Code :
- R-XDSO-C5
- Vgs (Max) :
- ±20V
- Number of Pins :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 23.5m Ω @ 10A, 10V
- Series :
- TrenchFET®
- Transistor Application :
- SWITCHING
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 5
- Pulsed Drain Current-Max (IDM) :
- 50A
- Power Dissipation :
- 5W
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 27.5A
- Drain-source On Resistance-Max :
- 0.0235Ohm
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 14 Weeks
- Nominal Vgs :
- 1.2 V
- Power Dissipation-Max :
- 5W Ta 35.7W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Drain to Source Breakdown Voltage :
- 100V
- REACH SVHC :
- No SVHC
- Published :
- 2010
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- PowerPAK® SO-8
- Mounting Type :
- Surface Mount
- Pin Count :
- 8
- Pbfree Code :
- yes
- Datasheets
- SI7456CDP-T1-GE3
N-Channel Tape & Reel (TR) 23.5m Ω @ 10A, 10V ±20V 730pF @ 50V 23nC @ 10V PowerPAK® SO-8
SI7456CDP-T1-GE3 Overview
The maximum input capacitance of this device is 730pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 27.5A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.There is no pulsed drain current maximum for this device based on its rated peak drain current 50A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1.2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SI7456CDP-T1-GE3 Features
a continuous drain current (ID) of 27.5A
a drain-to-source breakdown voltage of 100V voltage
based on its rated peak drain current 50A.
a threshold voltage of 1.2V
SI7456CDP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7456CDP-T1-GE3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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