SI7456CDP-T1-GE3

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Mfr.Part #
SI7456CDP-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 100V 27.5A PPAK SO-8
Stock
13,800
In Stock :
13,800

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Weight :
506.605978mg
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
2.8V @ 250μA
Terminal Position :
Dual
Gate to Source Voltage (Vgs) :
20V
Terminal Finish :
Pure Matte Tin (Sn)
Mount :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
730pF @ 50V
Terminal Form :
C BEND
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
27.5A Tc
Packaging :
Tape and Reel (TR)
Radiation Hardening :
No
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Threshold Voltage :
1.2V
JESD-30 Code :
R-XDSO-C5
Vgs (Max) :
±20V
Number of Pins :
8
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Rds On (Max) @ Id, Vgs :
23.5m Ω @ 10A, 10V
Series :
TrenchFET®
Transistor Application :
SWITCHING
Number of Channels :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
260
Number of Terminations :
5
Pulsed Drain Current-Max (IDM) :
50A
Power Dissipation :
5W
Element Configuration :
Single
Continuous Drain Current (ID) :
27.5A
Drain-source On Resistance-Max :
0.0235Ohm
Case Connection :
DRAIN
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
14 Weeks
Nominal Vgs :
1.2 V
Power Dissipation-Max :
5W Ta 35.7W Tc
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Drain to Source Breakdown Voltage :
100V
REACH SVHC :
No SVHC
Published :
2010
Time@Peak Reflow Temperature-Max (s) :
30
Package / Case :
PowerPAK® SO-8
Mounting Type :
Surface Mount
Pin Count :
8
Pbfree Code :
yes
Datasheets
SI7456CDP-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7456CDP-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Number of Channels:1, Number of Terminations:5, Operating Temperature:-55°C~150°C TJ, Package / Case:PowerPAK® SO-8, Mounting Type:Surface Mount, SI7456CDP-T1-GE3 pinout, SI7456CDP-T1-GE3 datasheet PDF, SI7456CDP-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7456CDP-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7456CDP-T1-GE3


N-Channel Tape & Reel (TR) 23.5m Ω @ 10A, 10V ±20V 730pF @ 50V 23nC @ 10V PowerPAK® SO-8

SI7456CDP-T1-GE3 Overview


The maximum input capacitance of this device is 730pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 27.5A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.There is no pulsed drain current maximum for this device based on its rated peak drain current 50A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1.2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SI7456CDP-T1-GE3 Features


a continuous drain current (ID) of 27.5A
a drain-to-source breakdown voltage of 100V voltage
based on its rated peak drain current 50A.
a threshold voltage of 1.2V


SI7456CDP-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI7456CDP-T1-GE3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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