SI7455DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

28A Tc

FET Type :

P-Channel

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

C BEND

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Resistance :

25mOhm

Terminal Finish :

PURE MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

5160pF @ 40V

Published :

2016

Drain to Source Voltage (Vdss) :

80V

Avalanche Energy Rating (Eas) :

101 mJ

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Reach Compliance Code :

Unknown

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

25m Ω @ 10.5A, 10V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

JESD-30 Code :

R-PDSO-C5

Continuous Drain Current (ID) :

28A

Pulsed Drain Current-Max (IDM) :

60A

Factory Lead Time :

6 Weeks

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

5.2W Ta 83.3W Tc

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Package / Case :

PowerPAK® SO-8