SI7454DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

35 ns

JESD-609 Code :

e3

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

34m Ω @ 7.8A, 10V

FET Type :

N-Channel

REACH SVHC :

Unknown

Fall Time (Typ) :

10 ns

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-XDSO-C5

Height :

1.04mm

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Terminations :

5

Resistance :

33mOhm

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

30A

Pin Count :

8

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

5.89mm

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Package / Case :

PowerPAK® SO-8

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Element Configuration :

Single

Power Dissipation :

1.9W

Peak Reflow Temperature (Cel) :

260

Terminal Form :

C BEND

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Threshold Voltage :

4V

Rise Time :

10ns

Terminal Position :

Dual

Weight :

506.605978mg

Drain Current-Max (Abs) (ID) :

5A

Vgs (Max) :

±20V

Power Dissipation-Max :

1.9W Ta

Turn On Delay Time :

16 ns

Number of Elements :

1

Case Connection :

DRAIN

Length :

4.9mm

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

7.8A

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2015

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Series :

TrenchFET®