SI7454DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.04mm

Number of Terminations :

5

Threshold Voltage :

4V

Rise Time :

10ns

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

35 ns

Pin Count :

8

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Power Dissipation-Max :

1.9W Ta

Published :

2008

Weight :

506.605978mg

Package / Case :

PowerPAK® SO-8

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

100V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

1.9W

ECCN Code :

EAR99

Voltage :

100V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Terminal Form :

C BEND

Resistance :

34mOhm

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Nominal Vgs :

4 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Pbfree Code :

yes

Mounting Type :

Surface Mount

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Length :

4.9mm

Current :

5A

Turn On Delay Time :

16 ns

Series :

TrenchFET®

Transistor Application :

SWITCHING

Width :

5.89mm

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

5A

Element Configuration :

Single

Number of Pins :

8

JESD-609 Code :

e3

JESD-30 Code :

R-XDSO-C5

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Mount :

Surface Mount

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

34m Ω @ 7.8A, 10V

FET Type :

N-Channel

Fall Time (Typ) :

10 ns

Terminal Position :

Dual

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Channels :

1