SI7454DDP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

10 ns

JESD-30 Code :

R-PDSO-C5

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Published :

2014

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Power Dissipation-Max :

4.1W Ta 29.7W Tc

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Series :

TrenchFET®

Height :

1.12mm

Number of Elements :

1

Transistor Application :

SWITCHING

Rise Time :

13ns

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

19.5nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

100V

Number of Terminations :

5

Threshold Voltage :

3V

Number of Pins :

8

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Pbfree Code :

yes

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

7.2 mJ

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 50V

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Length :

6.25mm

Fall Time (Typ) :

9 ns

Pulsed Drain Current-Max (IDM) :

40A

Continuous Drain Current (ID) :

21A

Element Configuration :

Single

Terminal Position :

Dual

Radiation Hardening :

No

Power Dissipation :

29.7W

Lead Free :

Lead Free

Package / Case :

PowerPAK® SO-8

Packaging :

Tape and Reel (TR)

Terminal Form :

C BEND

Rds On (Max) @ Id, Vgs :

33m Ω @ 10A, 10V

Number of Channels :

1

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Width :

5.26mm

REACH SVHC :

Unknown

Turn-Off Delay Time :

16 ns

Mounting Type :

Surface Mount

Resistance :

33mOhm