SI7452DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Published :

2016

Width :

5.89mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

4.9mm

Fall Time (Typ) :

40 ns

Resistance :

8.3mOhm

Continuous Drain Current (ID) :

11.5A

Package / Case :

PowerPAK® SO-8

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

60V

Height :

1.04mm

Rds On (Max) @ Id, Vgs :

8.3mOhm @ 19.3A, 10V

Turn-Off Delay Time :

90 ns

Number of Channels :

1

Drain to Source Resistance :

8.3mOhm

Supplier Device Package :

PowerPAK® SO-8

Series :

TrenchFET®

Drain to Source Voltage (Vdss) :

60V

Power Dissipation-Max :

1.9W Ta

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Rds On Max :

8.3 mΩ

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

150°C

Rise Time :

15ns

Element Configuration :

Single

Turn On Delay Time :

45 ns

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

11.5A Ta

Weight :

506.605978mg

Packaging :

Tape and Reel (TR)