SI7452DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

5.89mm

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Rise Time :

15ns

Mount :

Surface Mount

Continuous Drain Current (ID) :

11.5A

Qualification Status :

Not Qualified

Turn On Delay Time :

45 ns

Power Dissipation :

1.9W

Rds On (Max) @ Id, Vgs :

8.3m Ω @ 19.3A, 10V

Number of Elements :

1

Vgs (Max) :

±20V

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

11.5A Ta

Weight :

506.605978mg

Drain to Source Breakdown Voltage :

60V

Length :

4.9mm

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Terminal Position :

Dual

Power Dissipation-Max :

1.9W Ta

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

Height :

1.04mm

Package / Case :

PowerPAK® SO-8

Pin Count :

8

Terminal Form :

C BEND

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

90 ns

Number of Channels :

1

Published :

2013

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON