SI7450DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Mount :

Surface Mount

Nominal Vgs :

2 V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

20V

Number of Elements :

1

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Rise Time :

20ns

Drain to Source Breakdown Voltage :

200V

Length :

4.9mm

Pbfree Code :

yes

Manufacturer Package Identifier :

S17-0173_SINGLE

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Pulsed Drain Current-Max (IDM) :

40A

Continuous Drain Current (ID) :

3.2A

Turn On Delay Time :

14 ns

JESD-609 Code :

e3

Current Rating :

5.3A

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

150°C

Turn-Off Delay Time :

32 ns

Terminal Form :

C BEND

Resistance :

80mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

REACH SVHC :

Unknown

Fall Time (Typ) :

25 ns

Published :

2009

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Height :

1.12mm

Power Dissipation-Max :

1.9W Ta

Element Configuration :

Single

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

80m Ω @ 4A, 10V

Threshold Voltage :

2V

Package / Case :

PowerPAK® SO-8

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-XDSO-C5

Factory Lead Time :

14 Weeks

Width :

5.89mm

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Radiation Hardening :

No

Weight :

506.605978mg

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.9W

Pin Count :

8

Contact Plating :

Tin

Number of Channels :

1

Number of Terminations :

5