SI7448DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Vgs (Max) :

±12V

Drain Current-Max (Abs) (ID) :

13.4A

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

20V

Number of Pins :

8

Series :

TrenchFET®

Nominal Vgs :

600 mV

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0065ohm

JESD-30 Code :

R-PDSO-C5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Turn-Off Delay Time :

125 ns

Threshold Voltage :

600mV

Number of Terminations :

5

Terminal Finish :

PURE MATTE TIN

Turn On Delay Time :

22 ns

Packaging :

Tape and Reel (TR)

REACH SVHC :

Unknown

Fall Time (Typ) :

60 ns

Terminal Form :

C BEND

Rise Time :

22ns

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Gate to Source Voltage (Vgs) :

12V

Mount :

Surface Mount

Package / Case :

PowerPAK® SO-8

Continuous Drain Current (ID) :

22A

Pulsed Drain Current-Max (IDM) :

50A

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 22A, 4.5V

Transistor Element Material :

SILICON

Published :

2015

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

13.4A Ta

Number of Elements :

1

Power Dissipation-Max :

1.9W Ta

FET Type :

N-Channel