SI7448DP-T1-E3
- Mfr.Part #
- SI7448DP-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 13.4A PPAK SO-8
- Stock
- 16,368
- In Stock :
- 16,368
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Max Duty Cycle :
- 100 %
- Transistor Element Material :
- SILICON
- Package / Case :
- PowerPAK® SO-8
- Power Dissipation-Max :
- 1.9W Ta
- Pin Count :
- 8
- Continuous Drain Current (ID) :
- 13.4A
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±12V
- Height :
- 1.04mm
- JESD-30 Code :
- R-XDSO-C5
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Resistance :
- 6.5mOhm
- Number of Channels :
- 1
- ECCN Code :
- EAR99
- REACH SVHC :
- Unknown
- Published :
- 2016
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 13.4A Ta
- Switching Frequency :
- 52kHz
- Case Connection :
- DRAIN
- Weight :
- 506.605978mg
- Terminal Position :
- Dual
- FET Type :
- N-Channel
- Length :
- 4.9mm
- Width :
- 5.89mm
- Series :
- TrenchFET®
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 50A
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 22 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 22 ns
- Terminal Form :
- C BEND
- Power Dissipation :
- 1.9W
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 20V
- Rise Time :
- 22ns
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 125 ns
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 4.5V
- Nominal Vgs :
- 600 mV
- Number of Terminations :
- 5
- Gate to Source Voltage (Vgs) :
- 12V
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Output Current :
- 750mA
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 22A, 4.5V
- Datasheets
- SI7448DP-T1-E3
N-Channel Tape & Reel (TR) 6.5m Ω @ 22A, 4.5V ±12V 50nC @ 4.5V PowerPAK® SO-8
SI7448DP-T1-E3 Overview
Its continuous drain current is 13.4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 125 ns.Its maximum pulsed drain current is 50A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 22 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.
SI7448DP-T1-E3 Features
a continuous drain current (ID) of 13.4A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 125 ns
based on its rated peak drain current 50A.
SI7448DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7448DP-T1-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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