SI7447ADP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 24A, 10V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

25ns

Gate to Source Voltage (Vgs) :

25V

Drain-source On Resistance-Max :

0.0065ohm

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Continuous Drain Current (ID) :

21.5A

JESD-30 Code :

R-PDSO-C5

Terminal Position :

Dual

Package / Case :

PowerPAK® 1212-8

Element Configuration :

Single

Power Dissipation-Max :

5.4W Ta 83.3W Tc

Turn On Delay Time :

20 ns

Vgs (Max) :

±25V

Mount :

Surface Mount

Number of Elements :

1

Transistor Element Material :

SILICON

Series :

TrenchFET®

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Drain to Source Breakdown Voltage :

30V

Radiation Hardening :

No

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

82 ns

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

C BEND

Number of Terminations :

5

Fall Time (Typ) :

98 ns

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2013

Drain Current-Max (Abs) (ID) :

35A

Power Dissipation :

5.4W

Input Capacitance (Ciss) (Max) @ Vds :

4650pF @ 15V