SI7447ADP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

98 ns

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

FET Type :

P-Channel

Terminal Position :

Dual

Power Dissipation-Max :

5.4W Ta 83.3W Tc

Turn On Delay Time :

20 ns

Power Dissipation :

5.4W

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 24A, 10V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

Element Configuration :

Single

JESD-30 Code :

R-XDSO-C5

Mounting Type :

Surface Mount

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

25V

Drain-source On Resistance-Max :

0.0065ohm

Continuous Drain Current (ID) :

21.5A

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

30V

Radiation Hardening :

No

Vgs (Max) :

±25V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

25ns

Pulsed Drain Current-Max (IDM) :

60A

Number of Elements :

1

Number of Pins :

8

Number of Terminations :

5

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

PowerPAK® 1212-8

Series :

TrenchFET®

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

8

Turn-Off Delay Time :

82 ns

Published :

2016

Input Capacitance (Ciss) (Max) @ Vds :

4650pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Terminal Form :

C BEND