SI7446BDP-T1-GE3
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- Mfr.Part #
- SI7446BDP-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 12A PPAK SO-8
- Stock
- 42,895
- In Stock ：
- 42,895
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 7.5mOhm @ 19A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1.9W
- Published :
- 2016
- Series :
- TrenchFET®
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Vgs (Max) :
- ±20V
- Package / Case :
- PowerPAK® SO-8
- Power Dissipation-Max :
- 1.9W Ta
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 5V
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 12A
- Drain to Source Voltage (Vdss) :
- 30V
- Resistance :
- 7.5mOhm
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 120 ns
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3076pF @ 15V
- Drain to Source Resistance :
- 7.5mOhm
- Max Operating Temperature :
- 150°C
- Rds On Max :
- 7.5 mΩ
- Supplier Device Package :
- PowerPAK® SO-8
- Input Capacitance :
- 3.076nF
- Mount :
- Surface Mount
- Datasheets
- SI7446BDP-T1-GE3
N-Channel Tape & Reel (TR) 7.5mOhm @ 19A, 10V ±20V 3076pF @ 15V 33nC @ 5V 30V PowerPAK® SO-8
SI7446BDP-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3076pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [120 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 7.5mOhm.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI7446BDP-T1-GE3 Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 120 ns
single MOSFETs transistor is 7.5mOhm
a 30V drain to source voltage (Vdss)
SI7446BDP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7446BDP-T1-GE3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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