SI7446BDP-T1-E3

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Mfr.Part #
SI7446BDP-T1-E3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 30V 12A PPAK SO-8
Stock
2,359
In Stock :
2,359

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Max Operating Temperature :
150°C
Drain to Source Voltage (Vdss) :
30V
Lead Free :
Lead Free
Rise Time :
16ns
Supplier Device Package :
PowerPAK® SO-8
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
8
Mount :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Continuous Drain Current (ID) :
12A
Gate to Source Voltage (Vgs) :
20V
Input Capacitance :
3.076nF
Drain to Source Resistance :
7.5mOhm
Input Capacitance (Ciss) (Max) @ Vds :
3076pF @ 15V
Package / Case :
PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C :
12A Ta
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 5V
Turn-Off Delay Time :
120 ns
Min Operating Temperature :
-55°C
Rds On Max :
7.5 mΩ
Element Configuration :
Single
Drain to Source Breakdown Voltage :
30V
Rds On (Max) @ Id, Vgs :
7.5mOhm @ 19A, 10V
Series :
TrenchFET®
Fall Time (Typ) :
16 ns
Vgs (Max) :
±20V
FET Type :
N-Channel
Power Dissipation-Max :
1.9W Ta
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Published :
2009
Vgs(th) (Max) @ Id :
3V @ 250µA
Power Dissipation :
1.9W
Datasheets
SI7446BDP-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7446BDP-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Package / Case:PowerPAK® SO-8, SI7446BDP-T1-E3 pinout, SI7446BDP-T1-E3 datasheet PDF, SI7446BDP-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7446BDP-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7446BDP-T1-E3


N-Channel Tape & Reel (TR) 7.5mOhm @ 19A, 10V ±20V 3076pF @ 15V 33nC @ 5V 30V PowerPAK® SO-8

SI7446BDP-T1-E3 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3076pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 120 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 7.5mOhm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

SI7446BDP-T1-E3 Features


a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 120 ns
single MOSFETs transistor is 7.5mOhm
a 30V drain to source voltage (Vdss)


SI7446BDP-T1-E3 Applications


There are a lot of Vishay Siliconix
SI7446BDP-T1-E3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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