SI7445DP-T1-GE3

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Mfr.Part #
SI7445DP-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® 1212-8
Datasheet
Download
Description
MOSFET P-CH 20V 12A PPAK 1212-8
Stock
3,710
In Stock :
3,710

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Channels :
1
Height :
1.04mm
Rise Time :
45ns
Rds On Max :
7.7 mΩ
Series :
TrenchFET®
Number of Pins :
8
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
7.7mOhm @ 19A, 4.5V
Nominal Vgs :
-1 V
Min Operating Temperature :
-55°C
Continuous Drain Current (ID) :
-12A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Resistance :
7.7mOhm
Element Configuration :
Single
Published :
2012
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Supplier Device Package :
PowerPAK® 1212-8
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 5V
Turn-Off Delay Time :
400 ns
Mount :
Surface Mount
Fall Time (Typ) :
190 ns
Vgs(th) (Max) @ Id :
1V @ 250μA
Length :
4.9mm
FET Type :
P-Channel
Width :
5.89mm
Vgs (Max) :
±8V
Gate to Source Voltage (Vgs) :
8V
Current - Continuous Drain (Id) @ 25°C :
12A Ta
Power Dissipation-Max :
1.9W Ta
Turn On Delay Time :
40 ns
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Package / Case :
PowerPAK® 1212-8
Weight :
506.605978mg
Max Operating Temperature :
150°C
Drain to Source Voltage (Vdss) :
20V
Datasheets
SI7445DP-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7445DP-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:PowerPAK® 1212-8, SI7445DP-T1-GE3 pinout, SI7445DP-T1-GE3 datasheet PDF, SI7445DP-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7445DP-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7445DP-T1-GE3


P-Channel Tape & Reel (TR) 7.7mOhm @ 19A, 4.5V ±8V 140nC @ 5V 20V PowerPAK® 1212-8

SI7445DP-T1-GE3 Overview


This device conducts a continuous drain current (ID) of -12A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 400 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 7.7mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 40 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).

SI7445DP-T1-GE3 Features


a continuous drain current (ID) of -12A
the turn-off delay time is 400 ns
single MOSFETs transistor is 7.7mOhm
a 20V drain to source voltage (Vdss)


SI7445DP-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI7445DP-T1-GE3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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