SI7445DP-T1-GE3
- Mfr.Part #
- SI7445DP-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 12A PPAK 1212-8
- Stock
- 3,710
- In Stock :
- 3,710
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Height :
- 1.04mm
- Rise Time :
- 45ns
- Rds On Max :
- 7.7 mΩ
- Series :
- TrenchFET®
- Number of Pins :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 7.7mOhm @ 19A, 4.5V
- Nominal Vgs :
- -1 V
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- -12A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Resistance :
- 7.7mOhm
- Element Configuration :
- Single
- Published :
- 2012
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Supplier Device Package :
- PowerPAK® 1212-8
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 5V
- Turn-Off Delay Time :
- 400 ns
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 190 ns
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Length :
- 4.9mm
- FET Type :
- P-Channel
- Width :
- 5.89mm
- Vgs (Max) :
- ±8V
- Gate to Source Voltage (Vgs) :
- 8V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Power Dissipation-Max :
- 1.9W Ta
- Turn On Delay Time :
- 40 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Package / Case :
- PowerPAK® 1212-8
- Weight :
- 506.605978mg
- Max Operating Temperature :
- 150°C
- Drain to Source Voltage (Vdss) :
- 20V
- Datasheets
- SI7445DP-T1-GE3
P-Channel Tape & Reel (TR) 7.7mOhm @ 19A, 4.5V ±8V 140nC @ 5V 20V PowerPAK® 1212-8
SI7445DP-T1-GE3 Overview
This device conducts a continuous drain current (ID) of -12A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 400 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 7.7mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 40 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
SI7445DP-T1-GE3 Features
a continuous drain current (ID) of -12A
the turn-off delay time is 400 ns
single MOSFETs transistor is 7.7mOhm
a 20V drain to source voltage (Vdss)
SI7445DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7445DP-T1-GE3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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