SI7440DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Power Dissipation-Max :

1.9W Ta

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

12A

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 21A, 10V

Terminal Position :

Dual

Terminal Form :

C BEND

Drain-source On Resistance-Max :

0.0065ohm

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchFET®

Package / Case :

PowerPAK® SO-8

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Element Configuration :

Single

ECCN Code :

EAR99

Mount :

Surface Mount

Pbfree Code :

yes

JESD-30 Code :

R-XDSO-C5

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

75 ns

Fall Time (Typ) :

41 ns

Turn On Delay Time :

18 ns

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

5

Published :

2015

Pulsed Drain Current-Max (IDM) :

60A

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Case Connection :

DRAIN

FET Type :

N-Channel