SI7439DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Length :

4.9mm

Package / Case :

PowerPAK® SO-8

Pulsed Drain Current-Max (IDM) :

50A

Pbfree Code :

yes

Element Configuration :

Single

Published :

2015

Case Connection :

DRAIN

Power Dissipation :

1.9W

Threshold Voltage :

-4V

Weight :

506.605978mg

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

1.9W Ta

JESD-609 Code :

e3

Rise Time :

46ns

Fall Time (Typ) :

46 ns

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Number of Pins :

8

Pin Count :

8

Number of Terminations :

5

Height :

1.12mm

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Turn-Off Delay Time :

115 ns

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

-5.2A

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Series :

TrenchFET®

Vgs (Max) :

±20V

JESD-30 Code :

R-XDSO-C5

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

25 ns

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

-150V

Nominal Vgs :

-4 V

Drain to Source Voltage (Vdss) :

150V

Factory Lead Time :

14 Weeks

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

90m Ω @ 5.2A, 10V

Terminal Form :

C BEND

Width :

5.89mm

Terminal Finish :

Matte Tin (Sn) - annealed

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

3A

Additional Feature :

ULTRA LOW-ON RESISTANCE

Resistance :

90mOhm

Number of Elements :

1

Radiation Hardening :

No