SI7439DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

3A

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

-5.2A

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

50A

Radiation Hardening :

No

Terminal Form :

C BEND

Drain to Source Breakdown Voltage :

-150V

Rds On (Max) @ Id, Vgs :

90m Ω @ 5.2A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Package / Case :

PowerPAK® SO-8

Mounting Type :

Surface Mount

Fall Time (Typ) :

46 ns

Pin Count :

8

Turn On Delay Time :

25 ns

Threshold Voltage :

-4V

JESD-609 Code :

e3

Number of Pins :

8

Power Dissipation :

1.9W

Weight :

506.605978mg

Height :

1.12mm

Contact Plating :

Tin

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

115 ns

Max Junction Temperature (Tj) :

150°C

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Resistance :

90mOhm

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Mount :

Surface Mount

Rise Time :

46ns

Width :

5.89mm

ECCN Code :

EAR99

Number of Terminations :

5

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

1.9W Ta

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

150V

Factory Lead Time :

14 Weeks

Length :

4.9mm

Additional Feature :

ULTRA LOW-ON RESISTANCE

JESD-30 Code :

R-XDSO-C5

Transistor Application :

SWITCHING

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)