SI7434DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-XDSO-C5

Height :

1.04mm

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

Terminal Form :

C BEND

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Number of Channels :

1

Turn On Delay Time :

16 ns

Time@Peak Reflow Temperature-Max (s) :

40

Threshold Voltage :

4V

Case Connection :

DRAIN

Radiation Hardening :

No

Weight :

506.605978mg

Length :

4.9mm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Peak Reflow Temperature (Cel) :

260

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

47 ns

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

3.8A

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Mount :

Surface Mount

Power Dissipation :

1.9W

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Factory Lead Time :

14 Weeks

Power Dissipation-Max :

1.9W Ta

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

REACH SVHC :

Unknown

Vgs (Max) :

±20V

Number of Pins :

8

Number of Terminations :

5

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

155m Ω @ 3.8A, 10V

Published :

2005

Pin Count :

8

Width :

5.89mm

Drain Current-Max (Abs) (ID) :

2.3A

Pulsed Drain Current-Max (IDM) :

40A

Number of Elements :

1

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

23 ns

Package / Case :

PowerPAK® SO-8

Rise Time :

23ns

Drain to Source Breakdown Voltage :

250V