SI7434DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Case Connection :

DRAIN

JESD-30 Code :

R-XDSO-C5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1.9W Ta

Mount :

Surface Mount

Continuous Drain Current (ID) :

3.8A

Weight :

506.605978mg

Number of Terminations :

5

Power Dissipation :

1.9W

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

DS Breakdown Voltage-Min :

250V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Turn On Delay Time :

16 ns

Number of Elements :

1

Number of Channels :

1

Resistance :

155mOhm

Rds On (Max) @ Id, Vgs :

155m Ω @ 3.8A, 10V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Drain to Source Voltage (Vdss) :

250V

Transistor Element Material :

SILICON

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

23 ns

Length :

4.9mm

Height :

1.04mm

ECCN Code :

EAR99

Pin Count :

8

Lead Free :

Lead Free

Package / Case :

PowerPAK® SO-8

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

14 Weeks

Rise Time :

23ns

Width :

5.89mm

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

40A

Drain Current-Max (Abs) (ID) :

2.3A

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

Turn-Off Delay Time :

47 ns

Terminal Form :

C BEND

Pbfree Code :

yes