SI7431DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

P-Channel

Mount :

Surface Mount

Contact Plating :

Tin

Nominal Vgs :

-4 V

Pin Count :

8

Number of Terminations :

5

Pbfree Code :

yes

Height :

1.04mm

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

ULTRA-LOW RESISTANCE

Peak Reflow Temperature (Cel) :

260

Rise Time :

49ns

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Package / Case :

PowerPAK® SO-8

Pulsed Drain Current-Max (IDM) :

30A

Power Dissipation-Max :

1.9W Ta

Terminal Position :

Dual

Weight :

506.605978mg

Drain to Source Voltage (Vdss) :

200V

Rds On (Max) @ Id, Vgs :

174m Ω @ 3.8A, 10V

Terminal Form :

C BEND

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Continuous Drain Current (ID) :

-2.2A

Series :

TrenchFET®

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Element Configuration :

Single

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-200V

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

-4V

Length :

4.9mm

Published :

2011

Avalanche Energy Rating (Eas) :

45 mJ

Factory Lead Time :

14 Weeks

Radiation Hardening :

No

Turn On Delay Time :

23 ns

Lead Free :

Lead Free

JESD-30 Code :

R-XDSO-C5

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

Case Connection :

DRAIN

Power Dissipation :

1.9W

Width :

5.89mm

Fall Time (Typ) :

49 ns

Mounting Type :

Surface Mount

Number of Channels :

1

Turn-Off Delay Time :

110 ns