SI7431DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

45 mJ

Terminal Form :

C BEND

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

-200V

JESD-30 Code :

R-XDSO-C5

Nominal Vgs :

-4 V

Max Junction Temperature (Tj) :

150°C

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

174m Ω @ 3.8A, 10V

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

-4V

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

-3.8A

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.12mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

ULTRA-LOW RESISTANCE

Element Configuration :

Single

Mounting Type :

Surface Mount

Turn-Off Delay Time :

110 ns

Number of Channels :

1

Power Dissipation-Max :

1.9W Ta

Turn On Delay Time :

23 ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

FET Type :

P-Channel

Number of Terminations :

5

Pbfree Code :

yes

Number of Elements :

1

Transistor Application :

SWITCHING

Resistance :

174mOhm

Mount :

Surface Mount

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

Drain to Source Voltage (Vdss) :

200V

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Power Dissipation :

5.4W

Drain Current-Max (Abs) (ID) :

2.2A

Width :

5.89mm

REACH SVHC :

No SVHC

Radiation Hardening :

No

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Published :

2007

Length :

4.9mm

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchFET®

Pin Count :

8

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Weight :

506.605978mg

Rise Time :

49ns

ECCN Code :

EAR99

Package / Case :

PowerPAK® SO-8

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

30A

Fall Time (Typ) :

49 ns