SI7430DP-T1-E3

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Mfr.Part #
SI7430DP-T1-E3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 150V 26A PPAK SO-8
Stock
8,752
In Stock :
8,752

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Element Configuration :
Single
Transistor Element Material :
SILICON
Height :
1.04mm
RoHS Status :
ROHS3 Compliant
Turn On Delay Time :
16 ns
Width :
5.89mm
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
8
Pulsed Drain Current-Max (IDM) :
50A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
7 ns
Drain to Source Breakdown Voltage :
150V
Continuous Drain Current (ID) :
26A
Number of Channels :
1
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
5
Threshold Voltage :
2.5V
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Published :
2007
REACH SVHC :
Unknown
Number of Elements :
1
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
8V 10V
Packaging :
Tape and Reel (TR)
Avalanche Energy Rating (Eas) :
20 mJ
Gate to Source Voltage (Vgs) :
20V
Rise Time :
12ns
Time@Peak Reflow Temperature-Max (s) :
40
Vgs (Max) :
±20V
Pin Count :
8
Transistor Application :
SWITCHING
Package / Case :
PowerPAK® SO-8
Mount :
Surface Mount
Terminal Position :
Dual
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Weight :
506.605978mg
Power Dissipation-Max :
5.2W Ta 64W Tc
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Peak Reflow Temperature (Cel) :
260
Input Capacitance (Ciss) (Max) @ Vds :
1735pF @ 50V
Length :
4.9mm
Radiation Hardening :
No
JESD-30 Code :
R-XDSO-C5
JESD-609 Code :
e3
Turn-Off Delay Time :
20 ns
Power Dissipation :
5.2W
Factory Lead Time :
14 Weeks
Lead Free :
Lead Free
ECCN Code :
EAR99
Resistance :
45mOhm
Mounting Type :
Surface Mount
Drain Current-Max (Abs) (ID) :
7.2A
Contact Plating :
Tin
Terminal Form :
C BEND
Rds On (Max) @ Id, Vgs :
45m Ω @ 5A, 10V
Datasheets
SI7430DP-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7430DP-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, Package / Case:PowerPAK® SO-8, Mounting Type:Surface Mount, SI7430DP-T1-E3 pinout, SI7430DP-T1-E3 datasheet PDF, SI7430DP-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7430DP-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7430DP-T1-E3


N-Channel Tape & Reel (TR) 45m Ω @ 5A, 10V ±20V 1735pF @ 50V 43nC @ 10V PowerPAK® SO-8

SI7430DP-T1-E3 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 20 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1735pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 26A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Drain current refers to the maximum continuous current a device can conduct, and it is 7.2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 50A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2.5V, which means that it will not activate any of its functions when its threshold voltage reaches 2.5V.Using drive voltage (8V 10V), this device contributes to a reduction in overall power consumption.

SI7430DP-T1-E3 Features


the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 50A.
a threshold voltage of 2.5V


SI7430DP-T1-E3 Applications


There are a lot of Vishay Siliconix
SI7430DP-T1-E3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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