SI7425DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

55ns

FET Type :

P-Channel

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 4.5V

Turn-Off Delay Time :

130 ns

Pulsed Drain Current-Max (IDM) :

25A

Continuous Drain Current (ID) :

8.3A

Case Connection :

DRAIN

Pbfree Code :

yes

Transistor Application :

SWITCHING

Terminal Form :

C BEND

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Published :

2016

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

8V

Power Dissipation-Max :

1.5W Ta

Turn On Delay Time :

30 ns

Vgs (Max) :

±8V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 300μA

Package / Case :

PowerPAK® 1212-8

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

ECCN Code :

EAR99

Number of Terminations :

5

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Number of Pins :

8

Drain to Source Breakdown Voltage :

12V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

S-XDSO-C5

Resistance :

16mOhm

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

16m Ω @ 12.6A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.5W

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

100 ns

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Mount :

Surface Mount

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

40