SI7423DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

74 ns

Nominal Vgs :

-1 V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

-30V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

-1V

Series :

TrenchFET®

Pulsed Drain Current-Max (IDM) :

30A

REACH SVHC :

Unknown

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Continuous Drain Current (ID) :

-11.7A

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

7.4A Ta

Mount :

Surface Mount

Width :

3.05mm

FET Type :

P-Channel

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

1.5W

Power Dissipation-Max :

1.5W Ta

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

PowerPAK® 1212-8

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Lead Free :

Lead Free

Pbfree Code :

yes

Vgs (Max) :

±20V

Pin Count :

8

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

18m Ω @ 11.7A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

10 ns

Element Configuration :

Single

Resistance :

18mOhm

Mounting Type :

Surface Mount

Turn On Delay Time :

11 ns

Terminal Form :

C BEND

JESD-609 Code :

e3

Number of Elements :

1

Number of Terminations :

5

Rise Time :

10ns

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

JESD-30 Code :

R-XDSO-C5

Height :

1.04mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Length :

3.05mm

Published :

2005

Drain Current-Max (Abs) (ID) :

7.4A

Packaging :

Tape and Reel (TR)

Factory Lead Time :

14 Weeks