SI7421DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

C BEND

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Series :

TrenchFET®

Threshold Voltage :

-3V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Channels :

1

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Fall Time (Typ) :

42 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Number of Pins :

8

Transistor Element Material :

SILICON

Mount :

Surface Mount

REACH SVHC :

Unknown

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On (Max) @ Id, Vgs :

25m Ω @ 9.8A, 10V

Number of Terminations :

5

Turn-Off Delay Time :

57 ns

Drain Current-Max (Abs) (ID) :

6.4A

Radiation Hardening :

No

Turn On Delay Time :

10 ns

Current - Continuous Drain (Id) @ 25°C :

6.4A Ta

Drain-source On Resistance-Max :

0.025Ohm

Continuous Drain Current (ID) :

-9.8A

JESD-609 Code :

e3

Power Dissipation :

1.5W

Factory Lead Time :

14 Weeks

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Pin Count :

8

Package / Case :

PowerPAK® 1212-8

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

-30V

Pbfree Code :

yes

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Rise Time :

13ns

Pulsed Drain Current-Max (IDM) :

30A

Published :

2005

FET Type :

P-Channel

JESD-30 Code :

S-XDSO-C5

Power Dissipation-Max :

1.5W Ta