SI7421DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Resistance :

25mOhm

Drain to Source Breakdown Voltage :

-30V

Height :

1.04mm

Number of Terminations :

5

Package / Case :

PowerPAK® 1212-8

Width :

3.05mm

Rds On (Max) @ Id, Vgs :

25m Ω @ 9.8A, 10V

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

30A

Pin Count :

8

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

1.5W

Current - Continuous Drain (Id) @ 25°C :

6.4A Ta

Terminal Form :

C BEND

ECCN Code :

EAR99

Radiation Hardening :

No

JESD-30 Code :

S-XDSO-C5

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

Turn-Off Delay Time :

57 ns

Drain to Source Voltage (Vdss) :

30V

Length :

3.05mm

Case Connection :

DRAIN

Power Dissipation-Max :

1.5W Ta

Packaging :

Tape and Reel (TR)

Rise Time :

13ns

Pbfree Code :

yes

Vgs (Max) :

±20V

Series :

TrenchFET®

Transistor Element Material :

SILICON

Fall Time (Typ) :

13 ns

Number of Elements :

1

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

10 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

6.4A

Continuous Drain Current (ID) :

-9.8A

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Published :

2011

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)