SI7415DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

3.05mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

8

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

60V

Pin Count :

8

Mount :

Surface Mount

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Transistor Element Material :

SILICON

Turn On Delay Time :

12 ns

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Element Configuration :

Single

Number of Elements :

1

Fall Time (Typ) :

12 ns

Vgs (Max) :

±20V

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Threshold Voltage :

1V

Rise Time :

12ns

ECCN Code :

EAR99

Additional Feature :

FAST SWITCHING

Lead Free :

Lead Free

Height :

1.12mm

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Max Junction Temperature (Tj) :

150°C

Manufacturer Package Identifier :

SI7415DN-T1-GE3

Contact Plating :

Tin

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

-5.7A

Dual Supply Voltage :

-60V

Power Dissipation-Max :

1.5W Ta

Pulsed Drain Current-Max (IDM) :

30A

Nominal Vgs :

-3 V

Drain to Source Breakdown Voltage :

-60V

Time@Peak Reflow Temperature-Max (s) :

40

Termination :

SMD/SMT

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.5W

Rds On (Max) @ Id, Vgs :

65m Ω @ 5.7A, 10V

Number of Terminations :

5

Series :

TrenchFET®

Terminal Form :

C BEND

FET Type :

P-Channel

Length :

3.05mm

JESD-30 Code :

S-XDSO-C5

Published :

2013

Turn-Off Delay Time :

22 ns

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Package / Case :

PowerPAK® 1212-8

Terminal Position :

Dual

Resistance :

65mOhm

Drain Current-Max (Abs) (ID) :

3.6A