SI7415DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

12 ns

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

65m Ω @ 5.7A, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Turn On Delay Time :

12 ns

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.5W

Package / Case :

PowerPAK® 1212-8

Power Dissipation-Max :

1.5W Ta

REACH SVHC :

Unknown

Drain to Source Breakdown Voltage :

-60V

JESD-30 Code :

S-XDSO-C5

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Height :

1.12mm

Max Junction Temperature (Tj) :

150°C

Turn-Off Delay Time :

22 ns

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Drain to Source Voltage (Vdss) :

60V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

5

Continuous Drain Current (ID) :

-3.6A

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

30A

Threshold Voltage :

-3V

Series :

TrenchFET®

Mount :

Surface Mount

FET Type :

P-Channel

Pin Count :

8

Number of Pins :

8

ECCN Code :

EAR99

JESD-609 Code :

e3

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Resistance :

65mOhm

Published :

2008

Terminal Position :

Dual

Length :

3.05mm

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Rise Time :

12ns

Transistor Application :

SWITCHING

Element Configuration :

Single

Terminal Form :

C BEND

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Width :

3.05mm