SI7414DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

3.05mm

Pin Count :

8

Rise Time :

12ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Case Connection :

DRAIN

Turn On Delay Time :

15 ns

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

8.7A

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

3.05mm

Height :

1.04mm

Rds On (Max) @ Id, Vgs :

25m Ω @ 8.7A, 10V

Fall Time (Typ) :

12 ns

Time@Peak Reflow Temperature-Max (s) :

40

Termination :

SMD/SMT

Power Dissipation-Max :

1.5W Ta

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Drain to Source Breakdown Voltage :

60V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

S-XDSO-C5

Terminal Form :

C BEND

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

5.6A Ta

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

3V

Pulsed Drain Current-Max (IDM) :

30A

FET Type :

N-Channel

Number of Terminations :

5

Dual Supply Voltage :

60V

Turn-Off Delay Time :

30 ns

Pbfree Code :

yes

Mounting Type :

Surface Mount

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Nominal Vgs :

3 V

Series :

TrenchFET®

REACH SVHC :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Element Configuration :

Single

Mount :

Surface Mount

Power Dissipation :

1.5W

JESD-609 Code :

e3

Number of Channels :

1

Package / Case :

PowerPAK® 1212-8

Published :

2014

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Resistance :

25mOhm

Drain Current-Max (Abs) (ID) :

5.6A