SI7414DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

60V

FET Type :

N-Channel

Height :

1.12mm

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Length :

3.05mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Continuous Drain Current (ID) :

5.6A

Series :

TrenchFET®

Factory Lead Time :

14 Weeks

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

Unknown

Turn-Off Delay Time :

30 ns

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

30A

Power Dissipation :

1.5W

Packaging :

Tape and Reel (TR)

Threshold Voltage :

3V

Pin Count :

8

Manufacturer Package Identifier :

SI7414DN-T1-E3

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

S-XDSO-C5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Power Dissipation-Max :

1.5W Ta

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

25m Ω @ 8.7A, 10V

Mount :

Surface Mount

Number of Pins :

8

Rise Time :

12ns

Fall Time (Typ) :

12 ns

ECCN Code :

EAR99

Resistance :

25mOhm

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Number of Channels :

1

Terminal Position :

Dual

Max Junction Temperature (Tj) :

150°C

Published :

2008

Terminal Form :

C BEND

Case Connection :

DRAIN

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Package / Case :

PowerPAK® 1212-8

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

5.6A Ta

Turn On Delay Time :

15 ns

Nominal Vgs :

3 V

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Width :

3.05mm