NTMD6P02R2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Turn-Off Delay Time :

85 ns

Voltage - Rated DC :

-20V

Transistor Application :

SWITCHING

FET Type :

2 P-Channel (Dual)

Drain to Source Breakdown Voltage :

-20V

Length :

5mm

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Fall Time (Typ) :

50 ns

Contact Plating :

Tin

Factory Lead Time :

29 Weeks

Published :

2007

JESD-609 Code :

e3

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

4.8A

Operating Temperature :

-55°C~150°C TJ

Current Rating :

-6A

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Resistance :

33mOhm

Drain to Source Voltage (Vdss) :

20V

Continuous Drain Current (ID) :

7.8A

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Max Power Dissipation :

750mW

Rds On (Max) @ Id, Vgs :

33m Ω @ 6.2A, 4.5V

Number of Outputs :

1

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Transistor Element Material :

SILICON

Max Output Current :

6A

Pin Count :

8

Number of Terminations :

8

Power Dissipation :

2W

REACH SVHC :

No SVHC

Element Configuration :

Dual

Threshold Voltage :

-880mV

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

12V

ECCN Code :

EAR99

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Rise Time :

20ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 16V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Feedback Cap-Max (Crss) :

450 pF

Width :

4mm

Height :

1.5mm

Base Part Number :

NTMD6P02

Vgs(th) (Max) @ Id :

1.2V @ 250µA