NTMD3P03R2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 24V

Additional Feature :

AVALANCHE RATED

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

4mm

Resistance :

85mOhm

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

30V

Power - Max :

730mW

Base Part Number :

NTMD3P03

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Number of Terminations :

8

Nominal Vgs :

-1.7 V

Current Rating :

-3.05A

Factory Lead Time :

6 Weeks

REACH SVHC :

No SVHC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss) :

135 pF

Drain to Source Breakdown Voltage :

-30V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

85m Ω @ 3.05A, 10V

ECCN Code :

EAR99

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

2.34A

Contact Plating :

Tin

Turn On Delay Time :

16 ns

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

FET Type :

2 P-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Published :

2006

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Max Power Dissipation :

2W

Fall Time (Typ) :

45 ns

FET Feature :

Logic Level Gate

Number of Elements :

2

Length :

5mm

Height :

1.5mm

Mounting Type :

Surface Mount

Turn-Off Delay Time :

45 ns

Rise Time :

16ns

Power Dissipation :

2W

Lead Free :

Lead Free

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Continuous Drain Current (ID) :

-3.05A

Voltage - Rated DC :

-30V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V