NTMD2P01R2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

35ns

Drain-source On Resistance-Max :

0.1Ohm

Current Rating :

-2.3A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Number of Pins :

8

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

350 mJ

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Terminal Finish :

Tin/Lead (Sn/Pb)

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

-16V

Turn-Off Delay Time :

33 ns

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

16V

Power Dissipation :

2W

Pin Count :

8

Max Power Dissipation :

710mW

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.4A, 4.5V

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

9A

Mounting Type :

Surface Mount

JESD-609 Code :

e0

Gate to Source Voltage (Vgs) :

10V

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

2.3A

Mount :

Surface Mount

Lead Free :

Contains Lead

FET Type :

2 P-Channel (Dual)

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

-16V

Fall Time (Typ) :

29 ns

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 16V

Published :

2006

Transistor Element Material :

SILICON

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

240