NTMD3N08LR2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Subcategory :

FET General Purpose Powers

Number of Elements :

1

Additional Feature :

ULTRA-LOW RESISTANCE

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

8

Pulsed Drain Current-Max (IDM) :

25 A

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

N-Channel

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

2.3 A

Terminal Form :

Gull wing

Reach Compliance Code :

Compliant

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

25 mJ

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max (Abs) :

3.1 W

JESD-30 Code :

R-PDSO-G8

DS Breakdown Voltage-Min :

80 V

Drain-source On Resistance-Max :

0.215 Ω

Manufacturer :

ON Semiconductor

Transistor Element Material :

SILICON

Surface Mount :

yes