NTMD3P03R2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate to Source Voltage (Vgs) :

20V

Published :

2006

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

-3.05A

Power Dissipation :

2W

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 24V

Mount :

Surface Mount

Rise Time :

16ns

Additional Feature :

AVALANCHE RATED

Turn On Delay Time :

16 ns

Base Part Number :

NTMD3P03

Factory Lead Time :

6 Weeks

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Resistance :

85mOhm

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

REACH SVHC :

No SVHC

Height :

1.5mm

Current - Continuous Drain (Id) @ 25°C :

2.34A

Feedback Cap-Max (Crss) :

135 pF

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

85m Ω @ 3.05A, 10V

JESD-609 Code :

e3

Turn-Off Delay Time :

45 ns

Drain to Source Voltage (Vdss) :

30V

Nominal Vgs :

-1.7 V

Lead Free :

Lead Free

Radiation Hardening :

No

Current Rating :

-3.05A

Width :

4mm

Power - Max :

730mW

Length :

5mm

Max Power Dissipation :

2W

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Pbfree Code :

yes

Pin Count :

8

Voltage - Rated DC :

-30V

Fall Time (Typ) :

45 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

Drain to Source Breakdown Voltage :

-30V

Number of Elements :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Contact Plating :

Tin

Transistor Application :

SWITCHING