NTMD2C02R2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

240

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Pulsed Drain Current-Max (IDM) :

48A

Number of Elements :

2

Power Dissipation :

2W

Rise Time :

40ns

FET Feature :

Logic Level Gate

Published :

2006

Current - Continuous Drain (Id) @ 25°C :

5.2A 3.4A

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

JESD-609 Code :

e0

Reach Compliance Code :

not_compliant

Gate to Source Voltage (Vgs) :

12V

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Fall Time (Typ) :

35 ns

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 10V

Current Rating :

2A

Terminal Position :

Dual

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Continuous Drain Current (ID) :

3.4A

Rds On (Max) @ Id, Vgs :

43m Ω @ 4A, 4.5V

Terminal Finish :

Tin/Lead (Sn/Pb)

Voltage - Rated DC :

20V

Pin Count :

8

Drain-source On Resistance-Max :

0.043Ohm

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G8

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Lead Free :

Contains Lead

FET Type :

N and P-Channel

Drain to Source Breakdown Voltage :

20V

Mounting Type :

Surface Mount

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

35 ns

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Max Power Dissipation :

2W